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| (R) ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s s IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 oC LARGE RBSOA 3 1 2 TO-220 APPLICATIONS UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES s DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 9 8 16 4 8 80 -65 to 150 150 Unit V V V A A A A W o o C C April 2003 1/7 ST13007D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.56 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 700 V V CE = 700 V V CE = 400 V V EB = 9 V I C = 10 mA 400 T c = 100 o C Min. Typ. Max. 10 0.5 100 100 Unit A mA A A V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) Collector-Emitter Saturation Voltage IC IC IC IC = = = = 2 5 8 5 A A A A IB IB IB IB = = = = 0.4 A 1A 2A 1A T c = 100 o C 0.8 1.5 2 3 1.2 1.6 1.5 18 8 40 25 2.5 V V V V V V V V BE(sat) Base-Emitter Saturation Voltage DC Current Gain Diode Forward Voltage INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time IC = 2 A IC = 5 A IC = 5 A IC = 2 A IC = 5 A IC = 3 A I B = 0.4 A IB = 1 A IB = 1 A V CE = 5 V V CE = 5 V T c = 100 o C h FE Vf V ts tf ts tf IC = 5 A V CL = 250 V R BB = 0 I B1 = 1 A V BE(off) = -5 V L = 200 H (see figure 1) IC = 5 A V CL = 250 V R BB = 0 VBE(off) = -5 V B1 = 1 A o L = 200 H T C = 125 C (see figure 1) 1.7 90 2.2 150 2.3 150 s ns s ns * Pulsed: Pulse duration = 300 s, duty cycle 2 %. 2/7 ST13007D Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 ST13007D Diode Forward Voltage Switching Time Resistive Load Switching Time Inductive Load Reverse Biased SOA 4/7 ST13007D Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 ST13007D TO-220 MECHANICAL DATA DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 P011CI 6/7 ST13007D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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